elektronische bauelemente sgm3055 5.8a , 30v , r ds(on) 28 m ? n-channel enhancement mode power mosfet 29-may-2012 rev. c page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view 1 2 3 4 a b d l k f g h j e c rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the gm3055 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the sot-89 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. features ? fast switching ? dynamic dv/dt rating ? repetitive avalanche rated ? simple drive requirement marking package information package mpq leader size sot-89 1k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t a = 25c 5.8 a continuous drain current 1 t a = 70c i d 4.7 a pulsed drain current 2 i dm 30 a power dissipation 3 p d 1.5 w linear derating factor 0.0118 w / c operating junction & storage temperature t j , t stg -55~150 c thermal resistance rating thermal resistance junction-ambient 1 (max). r ja 85 c / w thermal resistance junction-case 1 (max). r jc 30 c / w sot-89 millimete r millimete r ref. min. max. ref. min. max. a 4.40 4.60 g - - b 4.05 4.25 h 0.89 1.20 c 2.40 2.60 j 0.35 0.41 d 1.40 1.60 k 0.70 0.80 e 3.00 ref. l 1.50 ref. f 0.40 0.52 3055 ???? ? = date code ? ? g ? ? s d ?? ?
elektronische bauelemente sgm3055 5.8a , 30v , r ds(on) 28 m ? n-channel enhancement mode power mosfet 29-may-2012 rev. c page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions drain-source breakdown voltage bv dss 30 - - v v gs =0, i d =250 a breakdown voltage temperature coefficient bv dss / t j - 0.021 - v / c reference to 25c, i d =1ma gate threshold voltage v gs(th) 1.2 - 2.5 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 20v t j =25c - - 1 v ds =24v, v gs =0 drain-source leakage current t j =55c i dss - - 5 a v ds =24v, v gs =0 - - 28 v gs =10v, i d =5a static drain-source on-resistance 2 r ds(on) - - 40 m ? v gs =4.5v, i d =4a total gate charge 2 q g - 6 8.4 gate-source charge q gs - 2.5 3.5 gate-drain (?miller?) charge q gd - 2.1 2.9 nc i d =5a v ds =15v v gs =4.5v turn-on delay time 2 t d(on) - 2.4 4.8 rise time t r - 7.8 14 turn-off delay time t d(off) - 22 44 fall time t f - 4 8 ns v dd =15v i d =5a v gs =10v r g =3.3 ? r d =1.9 ? input capacitance c iss - 572 800 output capacitance c oss - 81 112 reverse transfer capacitance c rss - 65 91 pf v gs =0 v ds =15v f=1.0 mhz source-drain diode forward on voltage 2 v sd - - 1.2 v i s =3a, v gs =0, t j =25c continuous source current( body diode ) 1.4 i s - - 5.8 a pulsed source current( body diode ) 2.4 i sm - - 30 a v d =v g =0, v s =1.2v notes: 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2oz copper. 2. the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3. the power dissipation is limit ed by 150c junction temperature 4. the data is theoretically the same as i d and i dm , in real applications, should be limited by total power dissipation.
elektronische bauelemente sgm3055 5.8a , 30v , r ds(on) 28 m ? n-channel enhancement mode power mosfet 29-may-2012 rev. c page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente sgm3055 5.8a , 30v , r ds(on) 28 m ? n-channel enhancement mode power mosfet 29-may-2012 rev. c page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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